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FJA4310
FJA4310
Audio Power Amplifier
* * * * High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO VCEO VEBO IC IB PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Value 200 140 6 10 1.5 100 150 - 55 ~ 150
Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob fT
* Pulse Test : PW=20s
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
* DC
Test Condition IC=5mA, IE=0 IC=50mA, RBE= IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A
Min. 200 140 6
Typ.
Max.
Units V V V
10 10 50 250 30 180 0.5
A A V pF MHz
Current Gain
Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product
hFE Classification
Classification hFE R 50 ~ 100 O 70 ~ 140 Y 90 ~ 180
(c)2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FJA4310
Typical Characteristics
IB = 300mA IB = 400mA
9
10
IB = 250mA IB = 200mA IB = 150mA
1000
VCE = 4 V
IC [A], COLLECTOR CURRENT
8
hFE, DC CURRENT GAIN
7 6 5 4 3 2
IB = 100mA
Ta = 25 C Ta = 125 C
100
o
o
IB = 50mA
Ta = - 25 C
o
IB = 20mA
1 0 0 1 2 3 4 10 0.1 1 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
1
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
2.5
2.0
VCE(sat) [V], SATURATION VOLTAGE
Ta = 125 C
0.1
o
1.5
Ta = 25 C
o
1.0
Ta = - 25 C
o
0.5
IC= - 10A IC= - 5A
0.0 0.0
0.4
0.8
1.2
1.6
2.0
0.01 0.01
0.1
1
10
IB [A], BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 4 V
IC (Pulse)
t=10ms
IC [A], COLLECTOR CURRENT
8
IC [A], COLLECTOR CURRENT
10
IC (DC)
t=100ms
6
4
Ta = 25 C
o
1
2
Ta = 125 C Ta = - 25 C
o
o
TC = 25 C Single Pulse
0.1 1.5 10 100
o
0 0.0
0.5
1.0
VBE [V], Base-Emitter On VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
(c)2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FJA4310
Typical Characteristics (Continued)
140
PC[W], COLLECTOR POWER DISSIPATION
120
100
80
60
40
20
0 0 25 50 75 100 125 150 175
TC[ C], CASE TEMPERATURE
o
Figure 7. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FJA4310
Package Demensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. B, June 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R)
DISCLAIMER
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R)
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H7

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